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> Philips bfq 136 npn 4 ghz wideband transistor BFQ136
Philips bfq 136 npn 4 ghz wideband transistor BFQ136
NPN transistor in a four-lead dual-emitter SOT122A envelope with
a ceramic cap. All leads are isolated from the stud. Diffused
emitter-ballasting resistors and the application of gold sandwich
metallization ensure an optimum temperature profile and excellent
reliability properties. It features extremely high output voltage
capabilities.It is primarily intended for final stages in UHF amplifiers.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
CEO collector-emitter voltage open base - 18 V
C DC collector current - 600 mA
tot total power dissipation up to Tc = 100 C - 9 W
T transition frequency IC = 500 mA; VCE = 15 V; f = 500 MHz; 4.0 - GHz
GUM maximum unilateral power gain IC = 500 mA; VCE = 15 V; f = 800 MHz; 12.5 - dB
Vo output voltage Ic = 500 mA; VCE = 15 V; 2.5 - V
(p+q-r) = 793.25 MHz; Tamb = 25 C
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