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> Igbt power transistor 1000V 50A 156W FGA50N100 (X4)
Igbt power transistor 1000V 50A 156W FGA50N100 (X4)
Qty: 4 FGA50N100 BNTD TO3P case
1000VDS, 50A, 156Watt, 1.5Vsat
Trench insulated gate bipolar transistors (IGBTs) with NPT
technology show outstanding performance in conduction
and switching characteristics as well as enhanced
avalanche ruggedness. These devices are well suited for
Induction Heating ( I-H ) applications
Low Saturation Voltage: VCE(sat) = 1.5V @ IC = 10A
Built-in Fast Recovery Diode
